transistor (npn) features z high power gain z recommended for fm if,osc stage and am conv. if stage. maximum ratings (t a =25 unless otherwise noted) symbol parameter value units v cbo collector-base voltage 35 v v ceo collector-emitter voltage 30 v v ebo emitter-base voltage 4 v i c collector current -continuous 50 ma p c collector power dissipation 350 mw t j junction temperature 150 t stg storage temperature -55-150 electrical characteristics (tamb=25 unless otherwise specified) parameter symbol test conditions min typ max unit collector-base breakdown voltage v (br)cbo i c = 10 a, i e =0 35 v collector-emitter breakdown voltage v (br)ceo i c = 1 ma, i b =0 30 v emitter-base breakdown voltage v (br)ebo i e = 10 a, i c =0 4 v collector cut-off current i cbo v cb =35v, i e =0 0.1 a emitter cut-off current i ebo v eb = 4 v, i c =0 0.1 a dc current gain h fe(1) v ce =12v, i c =2ma 40 240 collector-emitter saturation voltage v ce(sat) i c = 10 ma, i b = 1 ma 0.4 v base-emitter saturation voltage v be(sat) i c = 10 ma, i b = 1 ma 1 v transition frequency f t v ce =10v, i c = 1 ma 100 400 mhz power gain gpe v ce = 6 v, i c = 1 ma, f= 10.7m hz 27 33 db classification of h fe(1) rank r o y range 40-80 70-140 120-240 marking rr1 ro1 ry1 so t -23 1. base 2. emitter 3. collector 2SC2715 1 www.htsemi.com semiconductor jinyu
2SC2715 2 www.htsemi.com semiconductor jinyu
2SC2715 3 www.htsemi.com semiconductor jinyu
2SC2715 4 www.htsemi.com semiconductor jinyu
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